Silicon Carbide Substrate
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- High performance at a competitive price.
Silicon Carbide Substrate is made from high-purity silicon carbide (SiC), offering exceptional hardness, thermal conductivity, and chemical stability. It is widely used in electronic devices, automotive components, and military technologies. As a leading supplier and manufacturer of premium silicon carbide products, NexusX Advanced Materials can supply high-quality silicon carbide substrates with various specifications and competitive prices, offering customized solutions to meet specific requirements.
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Silicon Carbide Substrate Data Sheet
| Purity: | ≥99% |
| Color: | Black or Dark grey |
| Chemical Formula: | SiC |
| Material Grades: | Reaction Bonded SiC, Pressureless Sintered SiC, Hot-pressed SiC, etc. |
| Density: | >3.2 g/cm³ |
| Maximum Operating Temperature: | 1600℃ |
| Thickness: | 0.1-2.0 mm, or customized |
Silicon Carbide Substrate Description
Silicon Carbide (SiC) primarily exists in two crystal structures: the cubic β-SiC and the hexagonal α-SiC. Compared to other ceramics such as alumina (Al2O3) and boron carbide (B4C), SiC exhibits superior mechanical properties, better oxidation resistance, higher wear resistance, and lower friction coefficient. Additionally, it has excellent thermal stability, high strength at high temperatures, low thermal expansion, high thermal conductivity, and outstanding resistance to thermal shock and chemical corrosion. Silicon Carbide Substrate is made from high-purity silicon carbide (SiC). NexusX can supply high-precision silicon carbide substrates with customized solutions for diverse industry and research applications.
Silicon Carbide Rod/Bar Features
- High thermal conductivity
- Good resistance to high-temperature corrosion
- High strength
- Strong stability
- Wide bandgap
- High breakdown electric field
Silicon Carbide Substrate Applications
- Power Electronics: SiC is used to fabricate high-voltage, high-temperature, and high-frequency power devices like MOSFETs, IGBTs, and Schottky diodes, applied in electric vehicles, industrial motor drives, and renewable energy systems.
- RF Devices: SiC substrates support high-frequency, high-power RF devices (e.g., HEMTs) for 5G communications, radar, and satellite systems.
- Optoelectronics: SiC serves as a substrate for materials like GaN in high-brightness LEDs and lasers, used in lighting and display technologies.
- High-Temperature Electronics: SiC’s thermal stability enables sensors and control circuits for aerospace, automotive, and energy applications.
- Quantum Technologies: SiC shows promise in quantum computing and sensing, used for single-photon sources and qubits.
Silicon Carbide Substrate Packaging
Silicon carbide foam filter products are typically packaged in vacuum-sealed bags to prevent moisture or contamination and wrapped with foam to cushion vibrations and impacts during transport, ensuring the quality of products in their original condition.
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- SAFETY DATA SHEET (SDS) -Silicon Nitride Custom Parts
FAQ
What is a Silicon Carbide (SiC) Substrate, and what are its core characteristics?
It is a crystalline wafer made of silicon-carbon compound. Core characteristics: ultra-high thermal conductivity, wide bandgap, high breakdown electric field strength, and good chemical/mechanical stability.
What are the main polytypes of SiC Substrates, and which is most used in power electronics?
Main polytypes: 3C-SiC, 4H-SiC, 6H-SiC. 4H-SiC is the most widely used, thanks to its balanced electron mobility, breakdown strength and thermal conductivity.
What key advantages do SiC Substrates have over silicon substrates in power devices?
Higher power density and efficiency; better high-temperature performance; stronger high-frequency adaptability; smaller system size.
What are the main manufacturing challenges of SiC Substrates?
Difficult crystal growth (easy to form defects); high production cost; hard to process (high hardness); low yield of large-size wafers.
What are the typical application fields of SiC Substrates?
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