Aluminum Silicon Carbide IGBT Base Plate
- Custom and standard options available.
- Fast lead times guaranteed.
- High performance at a competitive price.
The AlSiC IGBT Base Plate is a high-performance, metal-matrix composite substrate designed specifically for next-generation power modules. Unlike conventional copper or aluminum base plates, AlSiC solves the critical mismatch between semiconductor materials and system packaging.NexusX Advanced Materials, as a premier manufacturer and supplier of high-quality Aluminum Silicon Carbide IGBT Base Plate products, focuses on producing high-precision aluminum nitride silicon structural compenents through advanced technologies for diverse application fields.
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Aluminum Silicon Carbide IGBT Base Plate Data Sheet
| Chemical Formula: | Al-SiC |
| Shape: | Plate |
| Dimension: | Standard or customized |
Aluminum Silicon Carbide IGBT Base Plate Description
The Aluminum Silicon Carbide (AlSiC) IGBT Base Plate is a groundbreaking metal matrix composite material specifically engineered to serve as the foundational thermal and structural core in high-power Insulated Gate Bipolar Transistor (IGBT) modules. It represents a significant leap forward from traditional copper or aluminum baseplates by solving the critical issue of thermal expansion mismatch, thereby unlocking new levels of power density and long-term reliability.In summary, the AlSiC IGBT base plate is not just a component; it is the cornerstone for building compact, reliable, and high-performance power modules.
Aluminum Silicon Carbide Material Chemical Composition
| Technology | Material Reference Code | Volume Fraction | Performance Advantages | Application Directions | |
| SiC (%) | Al (%) | ||||
| RSPM + HIP (Rapid Solidification + HIP) | HMA15 | 15 | 85 | ||
| HMA30 | 30 | 70 | |||
| HMA40 | 40 | 60 | |||
| HMA50 | 50 | 50 | |||
| Pressure Infiltration (PI) | HMA55 | 55 | 45 | ||
| HMA65 | 65 | 35 | |||
| HMA70 | 70 | 30 | |||
Aluminum Silicon Carbide IGBT Base Plate Features
- 1.Optimal Thermal Expansion Matching
- Tailorable CTE (6.5-8.5 ppm/K) perfectly matches ceramic substrates (Al₂O₃, AlN) and silicon chips
- Eliminates thermal stress and solder joint failure during power cycling
- Ensures long-term structural integrity under extreme temperature variations
- 2.Superior Thermal Management
- High thermal conductivity (180-220 W/mK) enables efficient heat dissipation
- Maintains lower junction temperatures for improved device reliability
- Enhanced power handling capability and thermal cycling performance
- 3.Lightweight Structural Solution
- Low density (∼3.0 g/cm³) reduces module weight by up to 65% compared to copper
- High specific stiffness provides excellent mechanical stability
- Ideal for weight-sensitive applications in automotive and aerospace
- 4.Enhanced Reliability
- Exceptional thermal fatigue resistance
- Maintains flatness and dimensional stability under thermal stress
- Compatible with standard packaging processes and materials
Aluminum Silicon Carbide IGBT Base Plate Applications
- 1. Electric Vehicle Power Systems
- Traction inverters and motor drives
- On-board chargers (OBC)
- DC-DC converters
- Provides reliable thermal management for high-power EV applications
- 2. Industrial Power Electronics
- Motor drives and servo controllers
- Uninterruptible Power Supplies (UPS)
- Welding equipment and industrial SMPS
- Withstands harsh industrial environments
- 3. Renewable Energy Systems
- Solar power inverters
- Wind turbine converters
- Energy storage system converters
- Ensures long-term reliability in outdoor applications
- 4. Aerospace and Transportation
- Aircraft power distribution systems
- Railway traction systems
- Urban transit vehicle drives
- Meets stringent weight and reliability requirements
- 5. High-Pensity Power Modules
- Compact power modules for telecom
- High-frequency power supplies
- Medical equipment power systems
- Enables miniaturization of power devices
Aluminum Silicon Carbide Packaging
Aluminum silicon carbide ceramic products are typically packaged in vacuum-sealed bags to prevent moisture or contamination and wrapped with foam to cushion vibrations and impacts during transport, ensuring the quality of products in their original condition.
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- SAFETY DATA SHEET (SDS) -Aluminum Silicon Carbide IGBT Base Plate
FAQ
What is the biggest advantage of AlSiC base plate over copper?
Its CTE match to ceramic substrates prevents thermal fatigue failure, while being 65% lighter.
Can AlSiC base plates handle high power applications?
Yes, with thermal conductivity of 180-220 W/mK, they excel in EV and industrial drives.
What is the typical operating temperature range?
-55°C to +250°C, capable of withstanding harsh operating conditions.
What surface finishes are available?
Ni/Au, Ni/Ag, and anodizing options for different bonding requirements.
How does it perform in thermal cycling tests?
Excellent. It typically withstands 3-5x more cycles than copper baseplates.
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