Pyrolytic Boron Nitride Crucible
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Pyrolytic Boron Nitride Crucible is an ultra-high purity ceramic container manufactured by chemical vapor deposition. It offers exceptional thermal stability (over 2000°C in inert/vacuum environments), outstanding chemical inertness, and very low outgassing. Its non-wetting surface allows clean separation from melts. PBN crucibles are primarily used in high-purity semiconductor processes (like MBE and crystal growth), metal refining, and advanced materials research where contamination must be avoided. NexusX Advanced Materials, as a premier manufacturer and supplier of high-quality pyrolytic boron nitride products, focuses on producing high-precision pyrolytic boron nitride crucibles for diverse application fields.
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Pyrolytic Boron Nitride Crucible Data Sheet
| Purity: | 99.99%-99.999% |
| Capacity: | PBN OLED Crucible: 300 ml-1200 ml PBN LEC Crucible: 50 ml-5 l PBN MBE Crucible: 5 ml-300 ml PBN VGF Crucible: 0.2 l-5 l |
| Color: | White |
| Density: | 1.95-2.20 g/cm3 |
| Production Method: | CVD |
Pyrolytic Boron Nitride Crucible Descriptions
The Pyrolytic Boron Nitride (PBN) Crucible is an ultra-high-purity, anisotropic ceramic container manufactured through high-temperature chemical vapor deposition, characterized by exceptional thermal stability capable of sustained operation above 2000°C in vacuum or inert atmospheres, extreme chemical inertness and a non-wetting surface that resists adhesion to most molten metals and semiconductors, remarkably low outgassing rates essential for ultra-high vacuum processes like molecular beam epitaxy (MBE), outstanding thermal shock resistance due to its layered structure, and anisotropic thermal conductivity providing efficient in-plane heat transfer with high radial insulation, making it an indispensable and contamination-free solution for high-purity crystal growth, semiconductor processing, metal refining, and advanced materials research.
Pyrolytic Boron Nitride OLED Crucible
The PBN OLED Crucible is a type of PBN crucible used in OLED and CIGS vapor deposition technologies. It features ultra-high purity, chemical inertness, excellent high-temperature performance, and thermal stability, making it widely used in metal and semiconductor vapor deposition processes.
| Specification | Inner Diameter (mm) | Lip Diameter (mm) | Height (mm) |
| 300cc | 55 | 70 | 160 |
| 500cc | 55 | 82 | 190 |
| 580cc | 62 | 84 | 186 |
| 700cc | 61 | 85 | 240 |
| 1200cc | 78 | 115 | 240 |
Pyrolytic Boron Nitride MBE Crucible
The PBN MBE Crucible is a high-performance crucible used in the Molecular Beam Epitaxy (MBE) process. It features ultra-high purity, chemical inertness, and excellent high-temperature stability, allowing it to withstand high temperatures during the MBE process without releasing gases or undergoing chemical reactions.
| MBE equipment | Specification | Inner Diameter (mm) | Lip Diameter (mm) | Height (mm) |
| Veeco | 125cc | 37 | >55 | 118 |
| Veeco | 500cc | 100 | 130 | 160 |
| Veeco | 1700cc | 130 | 160 | 290 |
| Veeco | 3700cc | 180 | 210 | 300 |
| Riber | BN-100L | 13 | 27 | 77 |
| Riber | BN-125L | 20 | 32 | 89 |
| Riber | BN-135L | 24 | 37 | 89 |
| Riber | 200cc | 68 | 84 | 156 |
| Note | The dimensions and shapes can be customized according to specific requirements. | |||
Pyrolytic Boron Nitride VGF Crucible
The VGF crucible is a container used in the Vertical Gradient Freezing (VGF) technique for synthesizing crystals such as GaAs, InP, CZGaP, and Ge. PBN VGF crucibles can withstand high temperatures and provide a stable thermal environment, allowing the crystal to grow in a controlled manner from the bottom upwards. This results in single crystals with low defect density and high uniformity.
| Catalog No | Application | Inside Diameter | Height | Thickness |
| BV-2 | VGF | 2″ | 10″ | 0.035″ |
| BV-3 | VGF | 3″ | 10″ | 0.035″ |
| BV-4 | VGF | 4″ | 8″ | 0.035″ |
| BV-5 | VGF | 5″ | 8″ | 0.04″ |
| BV-6 | VGF | 6″ | 7″ | 0.04″ |
| BV-8 | VGF | 8″ | 20″ | 0.08″ |
Pyrolytic Boron Nitride LEC Crucible
The PBN LEC crucible is a high-performance ceramic container specifically designed for the Liquid Encapsulated Czochralski (LEC) method, primarily used for growing compound semiconductor single crystals such as Gallium Arsenide (GaAs) and Indium Phosphide (InP). The exceptional chemical stability and corrosion resistance of the PBN LEC crucible ensure that it is not eroded by the melt or encapsulants while supporting the slow extraction of the crystal from the melt to form high-quality single crystals.The PBN LEC crucible is a high-performance ceramic container specifically designed for the Liquid Encapsulated Czochralski (LEC) method, primarily used for growing compound semiconductor single crystals such as Gallium Arsenide (GaAs) and Indium Phosphide (InP). The exceptional chemical stability and corrosion resistance of the PBN LEC crucible ensure that it is not eroded by the melt or encapsulants while supporting the slow extraction of the crystal from the melt to form high-quality single crystals.
| Catalog No | Application | Inside Diameter | Height | Thickness |
| BL-3 | LEC | 3″ | 3″ | 0.03″ |
| BL-4 | LEC | 4″ | 4″ | 0.035″ |
| BL-5 | LEC | 5″ | 5″ | 0.035″ |
| BL-6 | LEC | 6″ | 6″ | 0.04″ |
| BL-7 | LEC | 7″ | 7″ | 0.04″ |
| BL-8 | LEC | 8″ | 8″ | 0.04″ |
| BL-14 | LEC | 14″ | 14″ | 0.08″ |
Pyrolytic Boron Nitride Crucible Available Specifications
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| Code: PBN-C1-12 Capacity:1 cm³ | Code: PBN-C1-14 Capacity:1 cm³ | Code: PBN-C1-20 Capacity: 1.5 cm³ | Code: PBN-C2-16 Capacity: 2cm³ |
 |  |  |  |
| Code: PBN-C2-22 Capacity: 2 cm³ | Code: PBN-C5-16 Capacity: 5 cm³ | Code: PBN-C5-27 Capacity: 5 cm³ | Code: PBN-C5-29 Capacity:5 cm³ |
 |  |  |  |
| Code: PBN-C8-27 Capacity: 8 cm³ | Code: PBN-C10-22 Capacity: 10 cm³ | Code: PBN-C12-36 Capacity: 12 cm³ | Code: PB-C12-37 Capacity: 12 cm³ |
 |  |  |  |
| Code: PBN-C16-36 Capacity: 16 cm³ | Code: PBN-C25-33 Capacity: 25 cm³ | Code: PBN-C25-51 Capacity: 25 cm³ | Code: PBN-C35-34 Capacity: 35 cm³ |
 |  |  | |
| Code: PBN-C40-51 Capacity: 40 cm³ | Code: PBN-C60-54 Capacity: 60 cm³ | Code: PBN-C60-37 Capacity: 60cm³ | Code: PBN-C70-60 Capacity: 70 cm³ |
 |  |  |  |
| Code: PBN-C75-77 Capacity: 75 cm³ | Code: PBN-C80-54 Capacity: 80 cm³ | Code: PBN-C82-71 Capacity: 82 cm³ | Code: PBN-C85-41 Capacity: 85 cm³ |
 |  |  |  |
| Code: PBN-C125-54 Capacity: 125 cm³ | Code: PBN-C130-54 Capacity: 130 cm³ | Code: PBN-C150-60 Capacity: 150 cm³ | Code: PBN-C155-60 Capacity: 155 cm³ |
 |  |  |  |
| Code: PBN-C160-60 Capacity: 160 cm³ | Code: PBN-C200-84 Capacity : 200 cm³ | Code: PBN-C200-58 Capacity: 200 cm³ | Code: PBN-C200-102 Capacity: 200 cm³ |
 | |||
| Code: PBN-C420-84 Capacity : 420 cm³ |
Pyrolytic Boron Nitride Crucible Advantages
- Extreme Temperature Resistance: Stable above 2000°C in vacuum/inert gas.
- Ultra-High Purity: >99.99% purity, prevents sample contamination.
- Excellent Chemical Inertness: Resists most molten metals, salts, and semiconductors; non-wetting surface.
- Ultra-Low Outgassing: Ideal for ultra-high vacuum (UHV) applications like MBE.
- Superior Thermal Shock Resistance: Withstands rapid, extreme temperature changes.
- Anisotropic Thermal Conductivity: High in-plane conductivity with good radial insulation.
- High Machinability (as-deposited): Can be precision-machined before final heat treatment.
Pyrolytic Boron Nitride Crucible Applications
- Molecular Beam Epitaxy (MBE): Critical as effusion cell crucibles for evaporating high-purity source materials (e.g., Al, Ga, As) in ultra-high vacuum systems.
- Compound Semiconductor Crystal Growth: Primary crucible for synthesizing and growing single crystals of GaAs, InP, GaN, and other III-V or II-VI semiconductors.
- High-Purity Metal Refining: Used for zone refining, vacuum melting, and directional solidification of ultra-pure metals and alloys (e.g., Al, Ga, Si).
- Chemical Vapor Deposition (CVD) Substrate/ Susceptor: Serves as a stable, non-contaminating substrate or susceptor for CVD processes, including graphene and wide-bandgap semiconductor deposition.
- High-Temperature Evaporation & Sublimation: Ideal container for thermal evaporation of metals, oxides, and organic materials in thin-film coating and material purification.
- Laboratory & Research: Versatile container for high-temperature chemical reactions, sample heating, and material synthesis under inert or vacuum conditions.
Pyrolytic Boron Nitride Packaging
Pyrolytic Boron Nitride Ceramic products are typically packaged in vacuum-sealed bags to prevent moisture or contamination, and wrapped with foam to cushion vibrations and impacts during transport, ensuring the quality of products in their original condition.
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- SAFETY DATA SHEET (SDS) -Pyrolytic Boron Nitride Crucible
FAQ
What is a Pyrolytic Boron Nitride Crucible?
It is an ultra-high-purity ceramic container made via chemical vapor deposition (CVD), designed for extreme high-temperature and high-purity applications.
What is the maximum operating temperature of a Pyrolytic Boron Nitride crucible?
It can operate continuously above 2000°C in vacuum or inert atmospheres.
Why is the Pyrolytic Boron Nitride crucible preferred for semiconductor crystal growth?
Its ultra-high purity (>99.99%) and non-wetting surface prevent contamination of sensitive semiconductors like GaAs and InP.
Can the Pyrolytic Boron Nitride crucibles be used for melting metals?
Yes, they are ideal for melting high-purity metals (e.g., aluminum, gallium, silicon) due to chemical inertness and non-reactivity.
How does a Pyrolytic Boron Nitride crucible differ from an alumina or quartz crucible?
PBN offers higher temperature resistance, better thermal shock resistance, superior purity, and lower outgassing than alumina or quartz.
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